Z21256-10
Page Mode DRAM, 256KX1, 100ns, MOS, PZIP16Manufacturer: Intel
Categories: DRAMs
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Intel Z21256 series page mode DRAM, part number Z21256-10, offers a 256K x 1 memory organization with a maximum access time of 100ns. This MOS technology component operates with a 5V nominal supply voltage and supports separate input/output with 3-state outputs. Key features include RAS only, CAS before RAS, and hidden refresh modes, along with 256 refresh cycles. The device is housed in a 16-pin PZIP package with through-hole mounting. Its asynchronous operating mode and specific refresh capabilities make it suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: Z21256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 3.0000 |
| Technology | MOS |
| Length | 20.5740 |
| Access_Mode | PAGE |
| Access_Time_Max | 100.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-PZIP-T16 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 256KX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | ZIP |
| Package_Equivalence_Code | ZIP16,.1 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 8.4836 |
| Supply_Current_Max | 55.000000000000000 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 1.270 |
| Terminal_Position | ZIG-ZAG |
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