TD2118-7
Page Mode DRAM, 16KX1, 150ns, MOS, CDIP16Manufacturer: Intel
Categories: DRAMs
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Intel TD2118-7 is a 16K x 1 Page Mode DRAM, featuring a 150ns access time. This MOS technology component utilizes a separate I/O architecture and provides 3-state output characteristics. The memory density is 16,384 words, with a refresh cycle requirement of 128. Packaged in a 16-pin Ceramic Dual In-line (CDIP) package with through-hole termination and a 2.54mm terminal pitch, the TD2118-7 operates within a temperature range of -40°C to 85°C. Typical applications include computing systems and industrial control equipment. The standard supply current maximum is 23mA.
Additional Information
Series: TD2118RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 150.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 16384.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 16KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 16384.0000000000000000 |
| Number_of_Words_Code | 16k |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 128 |
| Supply_Current_Max | 23.000000000000000 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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