TD2118-4
Page Mode DRAM, 16KX1, 120ns, MOS, CDIP16Manufacturer: Intel
Categories: DRAMs
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Intel TD2118-4 is a 16,384-bit (16K x 1) Page Mode Dynamic Random-Access Memory (DRAM) IC. This component utilizes MOS technology and features a maximum access time of 120ns. The memory organization is 16K words by 1 bit, with separate I/O. Designed with a 16-terminal Ceramic Dual In-line Package (CDIP16), it supports through-hole mounting. The TD2118 series DRAM operates within a temperature range of -40°C to +85°C and offers 3-state outputs. It requires 128 refresh cycles and has a typical supply current of 25mA. This device is suitable for applications in industrial and consumer electronics requiring high-density, cost-effective memory solutions.
Additional Information
Series: TD2118RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 120.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 16384.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 16KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 16384.0000000000000000 |
| Number_of_Words_Code | 16k |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 128 |
| Supply_Current_Max | 25.000000000000000 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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