T21044-07
Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20Manufacturer: Intel
Categories: DRAMs
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Intel T21044 series Fast Page DRAM, part number T21044-07, offers a 4Mbit memory density with a 1M x 4 organization. This CMOS component features a maximum access time of 70ns and operates from a nominal 5V supply. The T21044-07 is housed in a 20-terminal PDSO (Plastic Dual Small Outline) package with a 1.270mm terminal pitch, suitable for surface mounting. Key specifications include 1024 refresh cycles and 3-state output characteristics. This component finds application in industrial automation and consumer electronics where reliable memory solutions are paramount.
Additional Information
Series: T21044RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 70.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDSO-J20 |
| Memory_Density | 4194304.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 1MX4 |
| Memory_Width | 4 |
| Number_of_Terminals | 20 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SOJ |
| Package_Equivalence_Code | SOJ20/26,.34 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Refresh_Cycles | 1024 |
| Self_Refresh | No |
| Standby_Current_Max | 0.001000000000000 |
| Supply_Current_Max | 105.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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