QD2164A-20
Page Mode DRAM, 64KX1, 200ns, MOS, CDIP16Manufacturer: Intel
Categories: DRAMs
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Intel QD2164A-20 is a 64K x 1 page mode DRAM, offering a 200ns maximum access time. This MOS technology component, part of the QD2164 series, features separate I/O and 3-state output characteristics. It is housed in a 16-terminal ceramic dual in-line package (CDIP16) with a terminal pitch of 2.54mm, designed for through-hole mounting. The memory organization is 64K words by 1 bit, with a refresh cycle requirement of 128. Operating within a temperature range of 0°C to 70°C, this component is suitable for applications in industrial control and legacy system designs.
Additional Information
Series: QD2164RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 200.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 65536.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 128 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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