QD2118-3
Page Mode DRAM, 16KX1, 100ns, MOS, CDIP16Manufacturer: Intel
Categories: DRAMs
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Intel QD2118-3 is a 16K x 1 Page Mode DRAM with a 100ns access time. This MOS technology component features separate I/O, 3-state output characteristics, and a CDIP16 package. Designed with a 16-bit organization and 16384 words, it operates within a temperature range of 0°C to 70°C. The QD2118-3 is suitable for applications in industrial and consumer electronics. It requires a supply current of up to 27mA and utilizes through-hole mounting for its 16 terminals.
Additional Information
Series: QD2118RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 100.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 16384.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 16KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 16384.0000000000000000 |
| Number_of_Words_Code | 16k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 128 |
| Supply_Current_Max | 27.000000000000000 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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