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PE21010-10

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PE21010-10

Fast Page DRAM, 1MX1, 100ns, CMOS, PDSO20

Manufacturer: Intel

Categories: DRAMs

Quality Control: Learn More

Intel PE21010-10 is a 1 Megabit (1M x 1) Fast Page Mode DRAM. This CMOS component features a maximum access time of 100ns and supports RAS only, CAS before RAS, and hidden refresh modes. The memory organization is 1M x 1, utilizing separate I/O. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage between 4.5V and 5.5V, with a nominal value of 5V. The device is housed in a 20-terminal Small Outline J-Lead (SOJ) package, suitable for surface mounting. This type of memory is commonly found in older computing systems and embedded applications requiring cost-effective, high-density data storage.

Additional Information

Series: PE21010RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1450
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max100.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeSEPARATE
JESD_30_CodeR-PDSO-J20
Memory_Density1048576.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ20/26,.34
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles512
Seated_Height_Max3.5600
Standby_Current_Max0.001000000000000
Supply_Current_Max60.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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