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PE21010-08

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PE21010-08

Fast Page DRAM, 1MX1, 80ns, CMOS, PDSO20

Manufacturer: Intel

Categories: DRAMs

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Intel PE21010-08 is a 1 Megabit (1M x 1) Fast Page Mode DRAM, operating at an 80ns access time. This CMOS memory component features a 5V supply voltage range (4.5V to 5.5V) and is housed in a 20-lead PDSO (SOJ) package with a 1.27mm terminal pitch. It supports various refresh modes including RAS Only, CAS Before RAS, and Hidden Refresh, with 512 refresh cycles. Applications for this memory device are found in industrial automation and consumer electronics where reliable, cost-effective memory solutions are required. The PE21010 series offers asynchronous operation and 3-state outputs.

Additional Information

Series: PE21010RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1450
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max80.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeSEPARATE
JESD_30_CodeR-PDSO-J20
Memory_Density1048576.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ20/26,.34
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles512
Seated_Height_Max3.5600
Standby_Current_Max0.001000000000000
Supply_Current_Max70.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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