P51C64H-12
Fast Page DRAM, 64KX1, 120ns, CMOS, PDIP16Manufacturer: Intel
Categories: DRAMs
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Intel P51C64H-12 is a 64K x 1 Fast Page Mode DRAM, featuring a 120ns access time. This CMOS component utilizes a 16-pin PDIP package with through-hole mounting and a 2.54mm terminal pitch. The memory organization is 64K words by 1 bit, with 256 refresh cycles. Its I/O type is separate, and it offers 3-state output characteristics. Operating within a temperature range of 0°C to 70°C, this device is suitable for applications in industrial control, consumer electronics, and legacy computing systems where reliable and cost-effective memory solutions are required. The memory density is 65536 bits.
Additional Information
Series: P51C64RoHS Status: Manufacturer Lead Time: 0Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 120.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-PDIP-T16 |
| Memory_Density | 65536.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 64KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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