P51C259H-12
Static Column DRAM, 64KX4, 120ns, CMOS, PDIP18Manufacturer: Intel
Categories: DRAMs
Quality Control: Learn More
Intel P51C259H-12 is a Static Column DRAM with a memory organization of 64K x 4 bits, providing a total density of 262,144 bits. This CMOS component features a maximum access time of 120ns and operates with a nominal supply voltage of 5V. The P51C259 series utilizes a common I/O type and 3-state output characteristics. Packaged in an 18-lead PDIP (Plastic Dual In-line Package) with a 2.54mm terminal pitch, it is designed for through-hole mounting. This component is suitable for applications requiring reliable memory solutions in the industrial and consumer electronics sectors. It supports 256 refresh cycles and operates within a temperature range of 0°C to 70°C.
Additional Information
Series: P51C259RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 120.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | STATIC COLUMN DRAM |
| Memory_Organization | 64KX4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
P51C259H-10
Static Column DRAM, 64KX4, 100ns, CMOS, PDIP18
P51C259L-12
Static Column DRAM, 64KX4, 120ns, CMOS, PDIP18
P51C259H-15
Static Column DRAM, 64KX4, 150ns, CMOS, PDIP18