P51C258H-20
Fast Page DRAM, 64KX4, 200ns, CMOS, PDIP18Manufacturer: Intel
Categories: DRAMs
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Intel P51C258H-20 is a 262144-bit Fast Page Mode DRAM organized as 64K words by 4 bits. This CMOS memory component features a maximum access time of 200ns and operates with a nominal supply voltage of 5V. The Intel P51C258 series memory utilizes 256 refresh cycles for data integrity. Designed with a 3-state output characteristic and common I/O type, it is housed in a PDIP18 (R-PDIP-T18) plastic package with 18 through-hole terminals on a 2.54mm pitch. This component is suitable for applications in industrial control and consumer electronics.
Additional Information
Series: P51C258RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 200.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 64KX4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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