Home

Products

Integrated Circuits (ICs)

Memory

DRAMs

P51C258H-15

Banner
productimage

P51C258H-15

Fast Page DRAM, 64KX4, 150ns, CMOS, PDIP18

Manufacturer: Intel

Categories: DRAMs

Quality Control: Learn More

Intel P51C258H-15 is a Fast Page DRAM component from the P51C258 series. This memory IC features a 64K x 4 organization, providing a total density of 262,144 bits. Designed with CMOS technology, it offers a maximum access time of 150ns. The component utilizes a 4-bit memory width and supports Fast Page mode operation. It comes in an 18-lead PDIP package with through-hole mounting. Key specifications include a nominal supply voltage of 5V, common I/O type, and 3-state output characteristics. The P51C258H-15 is suitable for applications requiring high-speed data access and is commonly found in computing systems and embedded designs. Operating temperature ranges from 0°C to 70°C. The package is rectangular and made of plastic/epoxy.

Additional Information

Series: P51C258RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_Time_Max150.0000000000000000
I_O_TypeCOMMON
JESD_30_CodeR-PDIP-T18
Memory_Density262144.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization64KX4
Memory_Width4
Number_of_Terminals18
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIP
Package_Equivalence_CodeDIP18,.3
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles256
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionDual

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
P51C258H-10

Fast Page DRAM, 64KX4, 100ns, CMOS, PDIP18

product image
P51C258H-12

Fast Page DRAM, 64KX4, 120ns, CMOS, PDIP18

product image
P51C258H-20

Fast Page DRAM, 64KX4, 200ns, CMOS, PDIP18