P51C256L-20
Fast Page DRAM, 256KX1, 200ns, CMOS, PDIP16Manufacturer: Intel
Categories: DRAMs
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Intel P51C256L-20 is a Fast Page Mode DRAM with a density of 256K x 1 bits. This component operates with a maximum access time of 200ns and utilizes CMOS technology for efficient operation. The memory organization is 256K words by 1 bit, providing a total capacity of 262,144 bits. It features separate I/O, 3-state output characteristics, and requires a nominal supply voltage of 5V. Packaged in a 16-lead PDIP (Plastic Dual In-line Package) with a terminal pitch of 2.54mm, this through-hole component is suitable for applications in industrial control, consumer electronics, and telecommunications systems where reliable and cost-effective memory solutions are required. The P51C256 series is designed for applications demanding high-speed data access within established memory architectures.
Additional Information
Series: P51C256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 200.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-PDIP-T16 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 256KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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