P51C256H-10
Fast Page DRAM, 256KX1, 100ns, CMOS, PDIP16Manufacturer: Intel
Categories: DRAMs
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Intel P51C256-10 is a 256K x 1 Fast Page Mode DRAM, manufactured by Intel. This component utilizes CMOS technology and offers an access time of 100ns. The memory organization is 256K words by 1 bit, with a total density of 262,144 bits. It features separate I/O, 3-state outputs, and operates from a nominal supply voltage of 5V. The P51C256-10 is housed in a 16-lead PDIP (Plastic Dual In-line Package) with through-hole mounting. Standard refresh cycles are implemented. This memory device is suitable for applications in industrial control and consumer electronics.
Additional Information
Series: P51C256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 100.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-PDIP-T16 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 256KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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