Home

Products

Integrated Circuits (ICs)

Memory

DRAMs

P2187A-30

Banner
productimage

P2187A-30

EDO DRAM, 8KX8, 300ns, NMOS, PDIP28

Manufacturer: Intel

Categories: DRAMs

Quality Control: Learn More

Intel P2187A-30 is an 8K x 8 EDO DRAM with a maximum access time of 300ns. This NMOS component operates with a nominal supply voltage of 5V, ranging from 4.5V to 5.5V, and features a 3-state output characteristic. The memory organization is 8K words by 8 bits, providing a total memory density of 65536 bits. Housed in a 28-lead PDIP (DIP) plastic package (JESD-30 Code: R-PDIP-T28), it utilizes through-hole mounting with a terminal pitch of 2.54mm. This component is suitable for applications requiring asynchronous memory access and is commonly found in industrial control systems and legacy computing platforms. The operating temperature range is 0°C to 70°C.

Additional Information

Series: P2187RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length36.8300
Width15.2400
TechnologyNMOS
Access_Time_Max300.0000000000000000
JESD_30_CodeR-PDIP-T28
Memory_Density65536.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization8KX8
Memory_Width8
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals28
Number_of_Words8192.0000000000000000
Number_of_Words_Code8k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIP
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles128
Seated_Height_Max5.0800
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionDual

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
P2187A-25

EDO DRAM, 8KX8, 250ns, NMOS, PDIP28

product image
P2187A-35

EDO DRAM, 8KX8, 350ns, NMOS, PDIP28

product image
ID2118-7

Page Mode DRAM, 16KX1, 150ns, MOS, CDIP16