P2164B-12
Page Mode DRAM, 64KX1, 120ns, MOS, PDIP16Manufacturer: Intel
Categories: DRAMs
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Intel's P2164B-12 is a 64K x 1 Page Mode DRAM, offering 65,536 bits of storage. This MOS technology component features a maximum access time of 120ns and operates with a nominal supply voltage of 5V. The memory organization is 64K words by 1 bit, providing a total density of 64K bits. Its I/O type is separate, and the output characteristics are 3-state. Packaged in a PDIP16 (R-PDIP-T16) through-hole configuration with a terminal pitch of 2.54mm, it is suitable for applications in consumer electronics and industrial control systems where reliable memory buffering is required. The P2164 series DRAMs are designed for robust performance in various embedded systems.
Additional Information
Series: P2164RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 120.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-PDIP-T16 |
| Memory_Density | 65536.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 128 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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