P21464-12
Page Mode DRAM, 64KX4, 120ns, MOS, PDIP18Manufacturer: Intel
Categories: DRAMs
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Intel P21464 Series P21464-12 is an 8-bit page mode DRAM featuring a memory organization of 64K words by 4 bits, yielding a total density of 262,144 bits. This MOS technology device operates with a maximum access time of 120 ns and utilizes a common I/O type with 3-state output characteristics. The component is housed in an 18-lead Plastic Dual In-line Package (PDIP) with through-hole mounting. It operates within a temperature range of 0°C to 70°C and requires a nominal supply voltage of 5V, with a maximum supply current of 60mA. The refresh cycles are specified at 256. This component is suitable for applications in computing and industrial control systems.
Additional Information
Series: P21464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 120.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Supply_Current_Max | 60.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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