P21464-10
Page Mode DRAM, 64KX4, 100ns, MOS, PDIP18Manufacturer: Intel
Categories: DRAMs
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Intel P21464 series page mode DRAM, part number P21464-10, offers a memory density of 262144 bits with a 64K x 4 organization. This MOS technology component features a maximum access time of 100ns and supports RAS only, CAS before RAS, and hidden refresh modes. The common I/O type and asynchronous operating mode are designed for flexibility. Packaged in an 18-lead PDIP (JESD-30 code R-PDIP-T18) with through-hole termination and a 2.54mm pitch, this component operates within a temperature range of 0°C to 70°C and requires a 5V supply voltage. It is suitable for applications in industrial control systems and legacy computing platforms.
Additional Information
Series: P21464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.9500 |
| Width | 7.6200 |
| Technology | MOS |
| Access_Mode | PAGE |
| Access_Time_Max | 100.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 3.9060 |
| Supply_Current_Max | 55.000000000000000 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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