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P21464-07

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P21464-07

Page Mode DRAM, 64KX4, 70ns, MOS, PDIP18

Manufacturer: Intel

Categories: DRAMs

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Intel P21464 Series, the P21464-07 is a 262Kbit MOS page mode Dynamic Random-Access Memory (DRAM) organized as 64K words by 4 bits. It features a maximum access time of 70ns and operates with a 5V supply. This component supports RAS-only, CAS-before-RAS, and hidden refresh cycles, with 256 refresh cycles required. The P21464-07 utilizes common I/O and 3-state output characteristics. Housed in an 18-lead Plastic Dual In-line Package (PDIP), it is suitable for through-hole mounting. This DRAM is commonly employed in memory subsystems for industrial control, consumer electronics, and data acquisition systems that require high-density, cost-effective memory solutions.

Additional Information

Series: P21464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length22.9500
Width7.6200
TechnologyMOS
Access_ModePAGE
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDIP-T18
Memory_Density262144.0000000000000000
Memory_IC_TypePAGE MODE DRAM
Memory_Organization64KX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals18
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIP
Package_Equivalence_CodeDIP18,.3
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles256
Seated_Height_Max3.9060
Supply_Current_Max70.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionDual

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