P21256-12
Page Mode DRAM, 256KX1, 120ns, MOS, PDIP16Manufacturer: Intel
Categories: DRAMs
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Intel P21256-12 is a 256K x 1 bit Page Mode DRAM. This device offers a maximum access time of 120ns and utilizes MOS technology. The memory organization is 256K words by 1 bit, with a total density of 262,144 bits. It features separate I/O and 3-state output characteristics. The component is housed in a 16-pin plastic dual in-line package (PDIP) with through-hole mounting and a terminal pitch of 2.54mm. Designed for operation within a temperature range of 0°C to 70°C, this DRAM is suitable for applications requiring significant memory capacity and efficient data access, commonly found in industrial control systems and consumer electronics.
Additional Information
Series: P21256RoHS Status: Manufacturer Lead Time: 0Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 120.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-PDIP-T16 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 256KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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