P21256-08
Page Mode DRAM, 256KX1, 80ns, MOS, PDIP16Manufacturer: Intel
Categories: DRAMs
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Intel P21256-08 is a 256K x 1 bit, MOS, page mode DRAM. This component features separate I/O and asynchronous operation. The P21256 series offers RAS only, CAS before RAS, and hidden refresh capabilities, supporting 256 refresh cycles. It operates with a supply voltage range of 4.5V to 5.5V, with a nominal voltage of 5V, and a maximum supply current of 60mA. The device has a maximum access time of 80ns. Packaged in a 16-lead Plastic Dual In-line Package (PDIP), it is suitable for through-hole mounting. This DRAM is utilized in various computing and industrial control applications requiring high-speed data access.
Additional Information
Series: P21256RoHS Status: Manufacturer Lead Time: 0Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 19.4300 |
| Width | 7.6200 |
| Technology | MOS |
| Access_Mode | PAGE |
| Access_Time_Max | 80.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-PDIP-T16 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 256KX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 3.6100 |
| Supply_Current_Max | 60.000000000000000 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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