P2107C-2
DRAM, 4KX1, 200ns, MOS, PDIP22Manufacturer: Intel
Categories: DRAMs
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Intel P2107C-2 is a 4K x 1 DRAM with a maximum access time of 200ns. This MOS technology component features separate I/O and 3-state output characteristics, organized as 4096 words by 1 bit. The component is housed in a 22-lead plastic dual in-line package (PDIP22) with a terminal pitch of 2.54mm. It supports 64 refresh cycles and operates within a temperature range of 0°C to 70°C. This through-hole device is suitable for applications in telecommunications, industrial control, and data acquisition systems.
Additional Information
Series: P2107RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 200.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-PDIP-T22 |
| Memory_Density | 4096.0000000000000000 |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 22 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP22,.4 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 64 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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