P2107C-1
DRAM, 4KX1, 150ns, MOS, PDIP22Manufacturer: Intel
Categories: DRAMs
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Intel P2107C-1 DRAM component from the P2107 series. This MOS technology memory features a 4K x 1 organization with a memory density of 4096 bits and a maximum access time of 150ns. The component utilizes separate I/O and 3-state output characteristics. It is housed in a 22-terminal PDIP package with a terminal pitch of 2.54mm, designed for through-hole mounting. The operating temperature range is from 0.0°C to 70.0°C. This component is suitable for applications requiring reliable, high-speed data storage within industrial and commercial systems.
Additional Information
Series: P2107RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 150.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-PDIP-T22 |
| Memory_Density | 4096.0000000000000000 |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 22 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP22,.4 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 64 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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