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P2107C

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P2107C

DRAM, 4KX1, 250ns, MOS, PDIP22

Manufacturer: Intel

Categories: DRAMs

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Intel P2107C is a 4K x 1 bit dynamic random-access memory (DRAM) component from the P2107 series. This MOS technology device features a maximum access time of 250ns and operates with separate I/O. The memory organization is 4K words, each 1 bit wide, for a total density of 4096 bits. The component is housed in a 22-terminal plastic dual in-line package (PDIP22) with through-hole mounting. Refresh cycles are rated at 64. This component finds application in legacy computing systems, embedded control, and industrial automation where reliable memory solutions are paramount. The operating temperature range is 0.0°C to 70.0°C.

Additional Information

Series: P2107RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyMOS
Access_Time_Max250.0000000000000000
I_O_TypeSEPARATE
JESD_30_CodeR-PDIP-T22
Memory_Density4096.0000000000000000
Memory_Organization4KX1
Memory_Width1
Number_of_Terminals22
Number_of_Words4096.0000000000000000
Number_of_Words_Code4k
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIP
Package_Equivalence_CodeDIP22,.4
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles64
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionDual

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