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P2104A-2

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P2104A-2

Page Mode DRAM, 4KX1, 200ns, MOS, PDIP16

Manufacturer: Intel

Categories: DRAMs

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Intel P2104A-2 is a 4K x 1 MOS Page Mode DRAM, offering a 200ns maximum access time. This component features separate I/O and 3-state output characteristics, housed in a 16-pin PDIP package. Designed for robust operation, it supports 64 refresh cycles and operates within a temperature range of 0°C to 70°C. Its memory organization and page mode capability make it suitable for various applications in consumer electronics and industrial control systems. The through-hole mounting, dual in-line package with a terminal pitch of 2.54mm, ensures compatibility with standard PCB assembly processes.

Additional Information

Series: P2104RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyMOS
Access_Time_Max200.0000000000000000
I_O_TypeSEPARATE
JESD_30_CodeR-PDIP-T16
Memory_Density4096.0000000000000000
Memory_IC_TypePAGE MODE DRAM
Memory_Organization4KX1
Memory_Width1
Number_of_Terminals16
Number_of_Words4096.0000000000000000
Number_of_Words_Code4k
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIP
Package_Equivalence_CodeDIP16,.3
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles64
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionDual

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