N21464-15
Page Mode DRAM, 64KX4, 150ns, MOS, PQCC18Manufacturer: Intel
Categories: DRAMs
Quality Control: Learn More
Intel N21464-15 is a 262K bit Page Mode DRAM with a memory organization of 64K x 4. This MOS technology component features a maximum access time of 150ns and a common I/O type. The N21464 series device operates within a temperature range of 0°C to 70°C and requires a nominal supply voltage of 5V. Its output characteristics are 3-state, and it utilizes 256 refresh cycles. The component is housed in an 18-terminal Plastic Chip Carrier (PQCC18) package, identified by JESD-30 code R-PQCC-J18, suitable for surface mounting. This DRAM is commonly found in applications within the industrial and computing sectors.
Additional Information
Series: N21464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 150.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PQCC-J18 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | QCCJ |
| Package_Equivalence_Code | LDCC18,.33X.53 |
| Package_Shape | Rectangular |
| Package_Style | CHIP CARRIER |
| Refresh_Cycles | 256 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | QUAD |
Request a Quote
Clients Also Buy
N21464-10
Page Mode DRAM, 64KX4, 100ns, MOS, PQCC18
N21464-06
Page Mode DRAM, 64KX4, 60ns, MOS, PQCC18
N21464-07
Page Mode DRAM, 64KX4, 70ns, MOS, PQCC18