N21464-12
Page Mode DRAM, 64KX4, 120ns, MOS, PQCC18Manufacturer: Intel
Categories: DRAMs
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Intel N21464-12 is a Page Mode DRAM component from the N21464 series. This memory IC offers a 64K x 4 organization, providing a total density of 262,144 bits. Featuring a maximum access time of 120ns, it utilizes MOS technology and a PQCC18 package style. The component supports common I/O characteristics and 3-state output. Operating within a temperature range of 0°C to 70°C, it requires a nominal supply voltage of 5V and exhibits a maximum supply current of 60mA. This surface-mount device is suitable for applications in computing, telecommunications, and industrial control systems where efficient memory access is critical. The N21464-12 is designed for high-density memory solutions.
Additional Information
Series: N21464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 120.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PQCC-J18 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | QCCJ |
| Package_Equivalence_Code | LDCC18,.33X.53 |
| Package_Shape | Rectangular |
| Package_Style | CHIP CARRIER |
| Refresh_Cycles | 256 |
| Supply_Current_Max | 60.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | QUAD |
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