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N21464-08

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N21464-08

Page Mode DRAM, 64KX4, 80ns, MOS, PQCC18

Manufacturer: Intel

Categories: DRAMs

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Intel N21464-08 is a 262Kb Page Mode DRAM with a memory organization of 64K words by 4 bits. This MOS technology component features an asynchronous operating mode and an access time of 80ns. It supports RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH modes, with 256 refresh cycles. The device operates with a supply voltage range of 4.5V to 5.5V and a nominal 5V, consuming a maximum supply current of 65mA. The N21464-08 is housed in an 18-terminal PQCC18 package (JESD30 R-PQCC-J18) with a terminal pitch of 1.27mm, suitable for surface mounting. Its common I/O and 3-state output characteristics make it applicable in general purpose memory applications across various industrial and consumer electronics sectors.

Additional Information

Series: N21464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length12.3460
Width7.3660
TechnologyMOS
Access_ModePAGE
Access_Time_Max80.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PQCC-J18
Memory_Density262144.0000000000000000
Memory_IC_TypePAGE MODE DRAM
Memory_Organization64KX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals18
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeQCCJ
Package_Equivalence_CodeLDCC18,.33X.53
Package_ShapeRectangular
Package_StyleCHIP CARRIER
Refresh_Cycles256
Seated_Height_Max3.5560
Supply_Current_Max65.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionQUAD

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