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N21464-07

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N21464-07

Page Mode DRAM, 64KX4, 70ns, MOS, PQCC18

Manufacturer: Intel

Categories: DRAMs

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Intel N21464-07, a Page Mode DRAM, offers a memory organization of 64K words by 4 bits, providing a total density of 262,144 bits. This component operates with a maximum access time of 70ns and utilizes MOS technology. Supporting asynchronous operation, it features RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH modes for efficient memory management. The common I/O type and 3-state output characteristics are standard for this memory integrated circuit type. Packaged in an 18-terminal PQCC18 (R-PQCC-J18) with J-bend terminals on a 1.270mm pitch, this surface-mount device operates from a 4.5V to 5.5V supply. Applications can be found in computing systems and telecommunications infrastructure where high-speed data access is required.

Additional Information

Series: N21464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length12.3460
Width7.3660
TechnologyMOS
Access_ModePAGE
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PQCC-J18
Memory_Density262144.0000000000000000
Memory_IC_TypePAGE MODE DRAM
Memory_Organization64KX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals18
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeQCCJ
Package_Equivalence_CodeLDCC18,.33X.53
Package_ShapeRectangular
Package_StyleCHIP CARRIER
Refresh_Cycles256
Seated_Height_Max3.5560
Supply_Current_Max70.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionQUAD

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