N21464-06
Page Mode DRAM, 64KX4, 60ns, MOS, PQCC18Manufacturer: Intel
Categories: DRAMs
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Intel N21464-06 is a 64K x 4-bit Page Mode DRAM, operating at 60ns access time. This MOS technology component utilizes a PQCC18 package with 18 terminals and supports asynchronous operation. Key features include RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH modes, along with common I/O. The device is designed for surface mounting and operates within a temperature range of 0°C to 70°C, with a supply voltage range of 4.5V to 5.5V. This DRAM is suitable for applications requiring efficient memory access and is found in various computing and control systems. The memory organization provides 262,144 bits of storage.
Additional Information
Series: N21464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 12.3460 |
| Width | 7.3660 |
| Technology | MOS |
| Access_Mode | PAGE |
| Access_Time_Max | 60.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I_O_Type | COMMON |
| JESD_30_Code | R-PQCC-J18 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | QCCJ |
| Package_Equivalence_Code | LDCC18,.33X.53 |
| Package_Shape | Rectangular |
| Package_Style | CHIP CARRIER |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 3.5560 |
| Supply_Current_Max | 75.000000000000000 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | QUAD |
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