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N21256-10

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N21256-10

Page Mode DRAM, 256KX1, 100ns, MOS, PQCC18

Manufacturer: Intel

Categories: DRAMs

Quality Control: Learn More

Intel N21256-10 is a 256K x 1 bit page mode DRAM, operating asynchronously with a maximum access time of 100ns. This MOS technology component features a separate I/O structure and supports RAS only, CAS before RAS, and hidden refresh modes for efficient data management. It is housed in an 18-terminal Plastic Leaded Chip Carrier (PLCC) package, conforming to the R-PQCC-J18 standard, with a terminal pitch of 1.27mm. The device operates from a 4.5V to 5.5V supply voltage, with a nominal of 5V, and has a maximum supply current of 55mA. Applications for this component are found in general computing and embedded systems.

Additional Information

Series: N21256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length12.3460
Width7.3660
TechnologyMOS
Access_ModePAGE
Access_Time_Max100.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeSEPARATE
JESD_30_CodeR-PQCC-J18
Memory_Density262144.0000000000000000
Memory_IC_TypePAGE MODE DRAM
Memory_Organization256KX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals18
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeQCCJ
Package_Equivalence_CodeLDCC18,.33X.53
Package_ShapeRectangular
Package_StyleCHIP CARRIER
Refresh_Cycles256
Seated_Height_Max3.5560
Supply_Current_Max55.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionQUAD

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