MR2164A-20/B
Page Mode DRAM, 64KX1, 200ns, MOS, CQCC18Manufacturer: Intel
Categories: DRAMs
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Intel MR2164A-20-B is a 64K x 1 Page Mode DRAM. This MOS technology component offers a maximum access time of 200ns, with a separate I/O configuration. The memory organization is 64K words by 1 bit. It features 128 refresh cycles and 3-state outputs. The device is housed in an 18-terminal Ceramic Chip Carrier (CQCC18) package, with a rectangular shape and surface-mount capability. Operating temperature ranges from -55.0C to 110.0C. This component finds application in industrial and military systems requiring robust memory solutions.
Additional Information
Series: MR2164RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 200.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XQCC-N18 |
| Memory_Density | 65536.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Temperature_Max | 110.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | QCCN |
| Package_Equivalence_Code | LCC18,.3X.43 |
| Package_Shape | Rectangular |
| Package_Style | CHIP CARRIER |
| Refresh_Cycles | 128 |
| Screening_Level_Reference_Standard | 38535Q/M;38534H;883B |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 1.270 |
| Terminal_Position | QUAD |
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