MD2118-4
Page Mode DRAM, 16KX1, 120ns, MOS, CDIP16Manufacturer: Intel
Categories: DRAMs
Quality Control: Learn More
Intel MD2118-4 is a 16K x 1 bit page mode DRAM, featuring a 120ns maximum access time. This MOS technology component utilizes separate I/O with 3-state output characteristics. The memory organization is 16KX1, and it supports 128 refresh cycles. Operating over a temperature range of -55°C to 125°C, the MD2118-4 is housed in a 16-pin ceramic dual in-line package (CDIP16) with through-hole termination and a standard 2.54mm terminal pitch. This component is suitable for applications requiring high-speed random access and data buffering, often found in legacy computing systems and industrial control equipment.
Additional Information
Series: MD2118RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 120.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 16384.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 16KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 16384.0000000000000000 |
| Number_of_Words_Code | 16k |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 128 |
| Supply_Current_Max | 25.000000000000000 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
MD2118-4/B
Page Mode DRAM, 16KX1, 120ns, MOS, CDIP16
MD2118-7/B
Page Mode DRAM, 16KX1, 150ns, MOS, CDIP16
MD2118-7
Page Mode DRAM, 16KX1, 150ns, MOS, CDIP16