LD2118-4
Page Mode DRAM, 16KX1, 120ns, MOS, CDIP16Manufacturer: Intel
Categories: DRAMs
Quality Control: Learn More
Intel LD2118-4 is a 16K x 1 bit page mode dynamic random-access memory (DRAM) organized as 16,384 words. This MOS technology component offers a maximum access time of 120 ns and operates with separate I/O. The LD2118 series memory IC is housed in a 16-pin ceramic dual in-line package (CDIP16) with through-hole mounting and a terminal pitch of 2.54mm. It supports 128 refresh cycles and features 3-state outputs. This component is suitable for applications in industrial automation, consumer electronics, and telecommunications equipment requiring reliable memory solutions. The operating temperature range is from -40°C to +85°C, with a maximum supply current of 25mA.
Additional Information
Series: LD2118RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 120.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 16384.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 16KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 16384.0000000000000000 |
| Number_of_Words_Code | 16k |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 128 |
| Supply_Current_Max | 25.000000000000000 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
LD2118-7
Page Mode DRAM, 16KX1, 150ns, MOS, CDIP16
ID2118-7
Page Mode DRAM, 16KX1, 150ns, MOS, CDIP16
D2164-25
Page Mode DRAM, 64KX1, 250ns, MOS, CDIP16