D2164A-20
Page Mode DRAM, 64KX1, 200ns, NMOS, CDIP16Manufacturer: Intel
Categories: DRAMs
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The Intel D2164A-20 is a 65,536-bit page mode dynamic random-access memory (DRAM) organized as 64K words by 1 bit. Featuring a 200ns maximum access time, this NMOS DRAM supports RAS-only and hidden refresh cycles with 128 refresh cycles. Its asynchronous operating mode and separate I/O configuration are standard for this generation of memory components. The device is housed in a 16-lead ceramic dual in-line package (CDIP16) with through-hole mounting and a terminal pitch of 2.54mm. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage of 4.5V to 5.5V. This component is commonly found in industrial control systems and legacy computing platforms.
Additional Information
Series: D2164RoHS Status: Manufacturer Lead Time: 0Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 19.5580 |
| Width | 7.6200 |
| Technology | NMOS |
| Access_Mode | PAGE |
| Access_Time_Max | 200.0000000000000000 |
| Additional_Feature | RAS ONLY/HIDDEN REFRESH |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-GDIP-T16 |
| Memory_Density | 65536.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 128 |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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