D2118-4S6446
Page Mode DRAM, 16KX1, 120ns, MOS, CDIP16Manufacturer: Intel
Categories: DRAMs
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Intel D2118 series Page Mode DRAM, part number D2118-4S6446, offers a 16K x 1 memory organization with a maximum access time of 120ns. This MOS technology component features separate I/O and 3-state output characteristics. Packaged in a 16-pin CDIP (Ceramic Dual In-line Package) with a 2.54mm terminal pitch, it operates within a temperature range of 0°C to 70°C. The D2118-4S6446 supports 128 refresh cycles and has a typical supply current of 25mA. This component is utilized in applications requiring moderate data storage and access speeds, commonly found in industrial control systems and legacy computing platforms.
Additional Information
Series: D2118RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 120.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 16384.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 16KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 16384.0000000000000000 |
| Number_of_Words_Code | 16k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 128 |
| Supply_Current_Max | 25.000000000000000 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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