D2118-4S6330
Page Mode DRAM, 16KX1, 120ns, MOS, CDIP16Manufacturer: Intel
Categories: DRAMs
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Intel D2118 Series D2118-4S6330 is a 16K x 1 bit page mode DRAM. This MOS technology component features a maximum access time of 120ns and operates with separate I/O. The memory organization provides 16,384 words, each with a single bit width. Packaged in a 16-lead ceramic dual in-line package (CDIP16) with through-hole mounting and a terminal pitch of 2.54mm, this device is suitable for applications requiring moderate memory density and specific timing characteristics. Typical applications include legacy computing systems and embedded designs where page mode access offers efficiency benefits. The component specifications include a refresh cycle requirement of 128 and a maximum supply current of 25mA. Operating temperature ranges from 0°C to 70°C.
Additional Information
Series: D2118RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 120.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 16384.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 16KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 16384.0000000000000000 |
| Number_of_Words_Code | 16k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 128 |
| Supply_Current_Max | 25.000000000000000 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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