D2117-3S6054
Page Mode DRAM, 16KX1, 200ns, MOS, CDIP16Manufacturer: Intel
Categories: DRAMs
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Intel D2117-3S6054 is a 16K x 1 bit page mode DRAM, part of the D2117 series. This MOS technology component features a 200ns maximum access time and a 3-state output characteristic. Designed with separate I/O, this device employs a DIP16 package with through-hole mounting and a terminal pitch of 2.540mm. The refresh cycles are specified at 128. This memory component finds application in systems requiring efficient data access and storage, often seen in legacy computing platforms and specialized control systems.
Additional Information
Series: D2117RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 200.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 16384.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 16KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 16384.0000000000000000 |
| Number_of_Words_Code | 16k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 128 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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