D2117-3
Page Mode DRAM, 16KX1, 200ns, MOS, CDIP16Manufacturer: Intel
Categories: DRAMs
Quality Control: Learn More
Intel D2117-3 is a 16K x 1 bit MOS DRAM, operating in Page Mode with a maximum access time of 200ns. This component, manufactured by Intel, features a memory organization of 16K words by 1 bit, utilizing separate I/O. The D2117 series memory IC is housed in a 16-lead Ceramic Dual In-line Package (CDIP16) with through-hole termination. It supports 128 refresh cycles and is designed for operation within a temperature range of 0°C to 70°C. The output characteristics are 3-state. This component finds application in various computing and embedded systems.
Additional Information
Series: D2117RoHS Status: Manufacturer Lead Time: 0Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 200.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 16384.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 16KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 16384.0000000000000000 |
| Number_of_Words_Code | 16k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 128 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
D2117-2
Page Mode DRAM, 16KX1, 150ns, MOS, CDIP16
D2117-2S6053
Page Mode DRAM, 16KX1, 150ns, MOS, CDIP16
D2117-3S6054
Page Mode DRAM, 16KX1, 200ns, MOS, CDIP16