D2117-2
Page Mode DRAM, 16KX1, 150ns, MOS, CDIP16Manufacturer: Intel
Categories: DRAMs
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Intel D2117 Series D2117-2 is a 16K x 1 bit Page Mode DRAM. This MOS technology component features a maximum access time of 150ns and operates with separate I/O. The memory organization provides a density of 16384 words, utilizing a 16-bit ceramic dual in-line package (CDIP16) with through-hole mounting. Designed for applications requiring efficient data access, this DRAM is suitable for use in computing systems and industrial control equipment. The component supports 128 refresh cycles and has a specified operating temperature range from 0°C to 70°C. Its 3-state output characteristics are standard for memory devices of this era.
Additional Information
Series: D2117RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 150.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 16384.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 16KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 16384.0000000000000000 |
| Number_of_Words_Code | 16k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 128 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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