D2107C-4
DRAM, 4KX1, 300ns, MOS, CDIP22Manufacturer: Intel
Categories: DRAMs
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Intel D2107C-4 is a MOS DRAM component from the D2107 series. This memory device features a density of 4K words by 1 bit, organized as 4KX1. It offers a maximum access time of 300ns and utilizes separate I/O. The component is housed in a 22-terminal Ceramic Dual In-line Package (CDIP22) with through-hole mounting. Operating within a temperature range of 0°C to 70°C, it incorporates a refresh cycle specification of 64. This memory unit is suitable for applications requiring reliable, high-density storage within established performance parameters.
Additional Information
Series: D2107RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 300.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T22 |
| Memory_Density | 4096.0000000000000000 |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 22 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP22,.4 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 64 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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