D2104A-4
Page Mode DRAM, 4KX1, 300ns, MOS, CDIP16Manufacturer: Intel
Categories: DRAMs
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Intel D2104A-4 is a 4K x 1 bit page mode dynamic random-access memory (DRAM) device, featuring MOS technology and a 300ns maximum access time. This component, organized as 4K words by 1 bit, utilizes separate input/output with 3-state output characteristics. It operates within a temperature range of 0°C to 70°C and requires 64 refresh cycles. The device is housed in a 16-lead ceramic dual in-line package (CDIP16) with through-hole mounting and a terminal pitch of 2.54mm. This memory component is suitable for applications in telecommunications and industrial control systems.
Additional Information
Series: D2104RoHS Status: Manufacturer Lead Time: 0Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 300.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 64 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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