C2164-15S6493
Page Mode DRAM, 64KX1, 150ns, MOS, CDIP16Manufacturer: Intel
Categories: DRAMs
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Intel C2164-15S6493 is a Page Mode DRAM with a memory organization of 64K x 1, providing a total density of 65,536 bits. This MOS technology component features a maximum access time of 150ns and operates with a nominal supply voltage of 5V. The device utilizes separate I/O with 3-state output characteristics and requires through-hole mounting in a 16-lead ceramic dual in-line package (CDIP16). Designed for applications requiring efficient memory access, the C2164 series is suitable for use in industrial control, consumer electronics, and telecommunications equipment. The refresh cycles are rated at 128.
Additional Information
Series: C2164RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 150.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 65536.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 128 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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