C2116-4
Page Mode DRAM, 16KX1, 300ns, MOS, CDIP16Manufacturer: Intel
Categories: DRAMs
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Intel C21164 series C2116-4 is a 16,384-word by 1-bit page mode DRAM. This MOS technology component features a maximum access time of 300ns and operates within a temperature range of 0°C to 70°C. The memory organization is 16Kx1, with separate I/O and 3-state output characteristics. Packaged in a 16-pin ceramic dual in-line package (CDIP16) with through-hole mounting and a terminal pitch of 2.54mm, this component is suitable for applications requiring reliable, high-density memory solutions. Industries such as industrial control and legacy system upgrades commonly utilize this type of memory. The refresh cycle for this device is 128.
Additional Information
Series: C21164RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 300.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 16384.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 16KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 16384.0000000000000000 |
| Number_of_Words_Code | 16k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 128 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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