C2109-4S6003
DRAM, 8KX1, 250ns, MOS, CDIP16Manufacturer: Intel
Categories: DRAMs
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Intel C2109 series C2109-4S6003 is a MOS technology DRAM with a memory density of 8192 bits organized as 8K words by 1 bit. This component features a maximum access time of 250ns and operates within a temperature range of 0°C to 70°C. The C2109-4S6003 utilizes separate input/output and has 3-state output characteristics. Packaged in a 16-terminal Ceramic Dual In-line Package (CDIP16) with through-hole mounting, it is suitable for applications requiring robust memory solutions. This DRAM is commonly found in industrial control systems and legacy computing platforms. The device specification includes a supply current maximum of 35mA and requires 64 refresh cycles.
Additional Information
Series: C2109RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 250.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 8192.0000000000000000 |
| Memory_IC_Type | OTHER DRAM |
| Memory_Organization | 8KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 8192.0000000000000000 |
| Number_of_Words_Code | 8k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 64 |
| Supply_Current_Max | 35.000000000000000 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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