C2109-4S6002
DRAM, 8KX1, 250ns, MOS, CDIP16Manufacturer: Intel
Categories: DRAMs
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Intel C2109-4S6002 is a MOS DRAM component from the C2109 series, featuring an 8K x 1 memory organization. This device offers a memory density of 8192 bits with a maximum access time of 250ns. The I/O type is SEPARATE, and the output characteristics are 3-State. Packaged in a 16-pin CDIP (Ceramic Dual In-line Package) with a terminal pitch of 2.54mm, it utilizes through-hole mounting. Operating within a temperature range of 0°C to 70°C, this component requires a supply current of up to 35mA. The C2109 series is suitable for applications in industrial automation and legacy system upgrades. This component is identified by its 16 terminals and supports 64 refresh cycles.
Additional Information
Series: C2109RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 250.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 8192.0000000000000000 |
| Memory_IC_Type | OTHER DRAM |
| Memory_Organization | 8KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 8192.0000000000000000 |
| Number_of_Words_Code | 8k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 64 |
| Supply_Current_Max | 35.000000000000000 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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