C2109-3S6000
DRAM, 8KX1, 200ns, MOS, CDIP16Manufacturer: Intel
Categories: DRAMs
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Intel C2109 series DRAM component, part number C2109-3S6000, offers an 8K x 1 memory organization with a density of 8192 bits. This MOS technology memory features a maximum access time of 200ns and operates with separate I/O. The component is housed in a 16-pin ceramic dual in-line package (CDIP16) with through-hole mounting. It supports 64 refresh cycles and provides 3-state output characteristics. Designed for applications requiring robust memory solutions, this Intel DRAM is suitable for use in industrial and embedded systems. The operating temperature range is from 0°C to 70°C.
Additional Information
Series: C2109RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 200.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 8192.0000000000000000 |
| Memory_IC_Type | OTHER DRAM |
| Memory_Organization | 8KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 8192.0000000000000000 |
| Number_of_Words_Code | 8k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 64 |
| Supply_Current_Max | 35.000000000000000 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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