BCR503E6393HTSA1
TRANS PREBIAS NPN 50V SOT23Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR503E6393HTSA1 is an NPN pre-biased bipolar junction transistor. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. The device offers a transition frequency of 100MHz and a power dissipation of 330mW. It includes integrated base resistors of 2.2 kOhms (R1) and emitter resistors of 2.2 kOhms (R2), simplifying circuit design. The BCR503E6393HTSA1 is supplied in a PG-SOT23 package for surface mounting, delivered on tape and reel. This transistor is commonly utilized in industrial automation, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 330 mW |
| Frequency - Transition | 100 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
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