BCR198WH6327XTSA1
TRANS PREBIAS PNP 50V SOT323Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
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Infineon Technologies BCR198WH6327XTSA1 is a PNP Pre-Biased Bipolar Junction Transistor (BJT) designed for surface mount applications. This component features a breakdown voltage of 50V and a maximum collector current of 100mA, with a transition frequency of 190MHz. It is packaged in the PG-SOT323 (SC-70) format. The integrated base resistors are R1 at 47 kOhms and R2 at 47 kOhms, providing a fixed bias. Maximum power dissipation is 250mW. This transistor type is suitable for digital logic circuits, switching applications, and general-purpose amplification across various industries including industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Frequency - Transition | 190 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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