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BCR198WH6327XTSA1

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BCR198WH6327XTSA1

TRANS PREBIAS PNP 50V SOT323

Manufacturer: Infineon Technologies

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Infineon Technologies BCR198WH6327XTSA1 is a PNP Pre-Biased Bipolar Junction Transistor (BJT) designed for surface mount applications. This component features a breakdown voltage of 50V and a maximum collector current of 100mA, with a transition frequency of 190MHz. It is packaged in the PG-SOT323 (SC-70) format. The integrated base resistors are R1 at 47 kOhms and R2 at 47 kOhms, providing a fixed bias. Maximum power dissipation is 250mW. This transistor type is suitable for digital logic circuits, switching applications, and general-purpose amplification across various industries including industrial automation and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 5V
Supplier Device PackagePG-SOT323
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max250 mW
Frequency - Transition190 MHz
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)47 kOhms

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