BCR198B6327HTLA1
TRANS PREBIAS PNP 50V SOT23Manufacturer: Infineon Technologies
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Infineon Technologies BCR198B6327HTLA1 is a PNP pre-biased bipolar junction transistor designed for surface mount applications. This device features integrated base resistors (R1 = 47 kOhms, R2 = 47 kOhms) for simplified circuit design. It offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The transistor exhibits a transition frequency of 190 MHz and a maximum power dissipation of 200 mW. The DC current gain (hFE) is a minimum of 70 at 5 mA collector current and 5 V Vce. The device is supplied in a PG-SOT23 package, presented on tape and reel. This component is commonly utilized in industrial automation, consumer electronics, and automotive control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 190 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
Request a Quote
Clients Also Buy
BCR198E6433HTMA1
TRANS PREBIAS PNP 50V SOT23
BCR148WE6327BTSA1
TRANS PREBIAS NPN 50V SOT323
BCR166E6433HTMA1
TRANS PREBIAS PNP 50V SOT23
